The PECVD is configured with silane (SiH4), ammonia (NH3), deuterated silane (SiD4), deuterated ammonia (ND3), nitrogen (N2), nitrous oxide (N2O) and sulfur hexafluoride (SF6). Silicon dioxide and silicon nitrides are the most common thin films produced using this system. Substrate temperature can be held below 350C and still achieve a high deposition rate and uniformity.